发明授权
- 专利标题: Semiconductor laser apparatus
- 专利标题(中): 半导体激光装置
-
申请号: US14441091申请日: 2013-10-01
-
公开(公告)号: US09331457B2公开(公告)日: 2016-05-03
- 发明人: Daiji Morita , Tomotaka Katsura , Susumu Konno , Shuichi Fujikawa , Satoshi Nishida , Kenji Kumamoto , Naoki Miyamoto , Hiroaki Kurokawa
- 申请人: MITSUBISHI ELECTRIC CORPORATION
- 申请人地址: JP Chiyoda-ku
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Chiyoda-ku
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2012-263980 20121203
- 国际申请: PCT/JP2013/076681 WO 20131001
- 国际公布: WO2014/087726 WO 20140612
- 主分类号: H01S5/40
- IPC分类号: H01S5/40 ; H01S5/14 ; G02B19/00 ; G02B27/10 ; G02B27/12 ; H01S5/022 ; G02B3/06 ; G02B27/14 ; G02B27/42
摘要:
A semiconductor laser apparatus, including: a beam divergence angle correction optical system for correcting a divergence angle of beams generated from light emitting points of a semiconductor laser bar; a beam rotation optical system for rotating the beams each having the corrected divergence angle; a wavelength dispersion optical element having a wavelength dispersion function; and a partial reflection mirror. A relative position of the beam divergence angle correction optical system with respect to the light emitting point in a divergence angle correction direction is changed for each light emitting point.
公开/授权文献
- US20150303656A1 SEMICONDUCTOR LASER APPARATUS 公开/授权日:2015-10-22
信息查询