发明授权
- 专利标题: Acoustically-engineered multi-port piezoelectric-on-semiconductor resonators for accurate temperature sensing and reference signal generation
- 专利标题(中): 声学设计的多端口压电半导体谐振器,用于精确的温度检测和参考信号生成
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申请号: US14015707申请日: 2013-08-30
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公开(公告)号: US09318998B1公开(公告)日: 2016-04-19
- 发明人: Roozbeh Tabrizian , Farrokh Ayazi
- 申请人: Georgia Tech Research Corporation
- 申请人地址: US GA Atlanta
- 专利权人: Georgia Tech Research Corporation
- 当前专利权人: Georgia Tech Research Corporation
- 当前专利权人地址: US GA Atlanta
- 代理机构: Myers Bigel & Sibley, P.A.
- 主分类号: H03B5/32
- IPC分类号: H03B5/32 ; H01L41/09 ; H03B5/04 ; H03L1/02 ; H03B21/00 ; H03B5/30
摘要:
An integrated circuit device includes a multi-port piezoelectric-on-semiconductor microelectromechanical resonator, which is configured to support independent and concurrent piezoelectric transduction of multiple resonance modes. The resonator includes a semiconductor resonator body (e.g., Si body) suspended opposite an underlying recess in a substrate. Opposite ends of the semiconductor resonator body are anchored to the substrate. The resonator body may be formed so that a plan layout view of a portion of the semiconductor resonator body is dumbbell-shaped to thereby support acoustic energy trapping of multiple high-Q resonance modes.
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