发明授权
US09318345B2 Enhancing transistor performance by reducing exposure to oxygen plasma in a dual stress liner approach
有权
通过在双重应力衬垫方法中减少暴露于氧等离子体来提高晶体管性能
- 专利标题： Enhancing transistor performance by reducing exposure to oxygen plasma in a dual stress liner approach
- 专利标题（中）： 通过在双重应力衬垫方法中减少暴露于氧等离子体来提高晶体管性能
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申请号： US13253210申请日： 2011-10-05
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公开(公告)号： US09318345B2公开(公告)日： 2016-04-19
- 发明人: Ronald Naumann , Volker Grimm , Andrey Zakharov , Ralf Richter
- 申请人： Ronald Naumann , Volker Grimm , Andrey Zakharov , Ralf Richter
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Amerson Law Firm, PLLC
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/311 ; H01L21/8238 ; H01L21/02 ; H01L29/78
摘要：
When forming strain-inducing dielectric material layers above transistors of different conductivity type, the patterning of at least one strain-inducing dielectric material may be accomplished on the basis of a process sequence in which a negative influence of a fluorine species in an oxygen plasma upon removing the resist mask is avoided or at least significantly suppressed. For example, a substantially oxygen-free plasma process may be applied for removing the resist material.
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