发明授权
- 专利标题： MRAM wtih metal gate write conductors
- 专利标题（中）： MRAM金属栅极写入导体
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申请号： US14282497申请日： 2014-05-20
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公开(公告)号： US09318180B2公开(公告)日： 2016-04-19
- 发明人: Krishnakumar Mani
- 申请人： III Holdings 1, LLC
- 申请人地址： US DE Wilmington
- 专利权人： III HOLDINGS 1, LLC
- 当前专利权人： III HOLDINGS 1, LLC
- 当前专利权人地址： US DE Wilmington
- 代理机构： McAndrews, Held & Malloy, Ltd.
- 主分类号： G11C11/14
- IPC分类号： G11C11/14 ; G11C11/16 ; H01L27/22
摘要：
In one embodiment of the invention, there is provided a magnetic random access (MRAM) device. The device comprises a plurality of MRAM cells, wherein each MRAM cell comprises a magnetic bit, and write conductors defined by conductors patterned in a second metal layer above the magnetic bit; and a gate formed below the magnetic bit between a source and a drain; and addressing circuits to address the MRAM cells.
公开/授权文献
- US20140254255A1 MRAM WTIH METAL GATE WRITE CONDUCTORS 公开/授权日：2014-09-11
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