发明授权
- 专利标题: Methods of depositing thin films using molybdenum sputtering targets
- 专利标题(中): 使用钼溅射靶沉积薄膜的方法
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申请号: US14608995申请日: 2015-01-29
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公开(公告)号: US09309591B2公开(公告)日: 2016-04-12
- 发明人: Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
- 申请人: Brad Lemon , Joseph Hirt , Timothy Welling , James G. Daily, III , David Meendering , Gary Rozak , Jerome O'Grady , Prabhat Kumar , Steven A. Miller , Rong-chein Richard Wu , David G. Schwartz
- 申请人地址: US MA Newton
- 专利权人: H.C. Starck, Inc.
- 当前专利权人: H.C. Starck, Inc.
- 当前专利权人地址: US MA Newton
- 代理机构: Morgan, Lewis & Bockius LLP
- 主分类号: C23C14/34
- IPC分类号: C23C14/34 ; C23C14/46 ; C23C14/35 ; B22F3/16 ; C22C1/04 ; C22C27/04 ; B22F3/24
摘要:
In various embodiments, tubular sputtering targets comprising molybdenum are provided and sputtered to produce thin films comprising molybdenum. The sputtering targets may be formed by forming a tubular billet having an inner diameter IDI and an outer diameter ODI, the formation comprising pressing molybdenum powder in a mold and sintering the pressed molybdenum powder, working the tubular billet to form a worked billet having an outer diameter ODf smaller than ODI, and heat treating the worked billet. The sputtering targets may have a substantially uniform texture of (a) a 110 orientation parallel to a longitudinal direction and (b) a 111 orientation parallel to a radial direction.
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