发明授权
- 专利标题： Semiconductor structures and fabrication method thereof
- 专利标题（中）： 半导体结构及其制造方法
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申请号： US14324403申请日： 2014-07-07
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公开(公告)号： US09305833B2公开(公告)日： 2016-04-05
- 发明人: Chunzhou Hu
- 申请人： Semiconductor Manufacturing International (Shanghai) Corporation
- 申请人地址： CN Shanghai
- 专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- 当前专利权人： SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- 当前专利权人地址： CN Shanghai
- 代理机构： Anova Law Group, PLLC
- 优先权： CN201310365795 20130820
- 主分类号： H01L21/44
- IPC分类号： H01L21/44 ; H01L21/469 ; H01L21/31 ; H01L21/768 ; H01L21/02 ; H01L21/321
摘要：
A method is provided for fabricating a semiconductor structure. The method includes providing a substrate; and forming a conductive layer in one surface of the substrate. The method also includes forming a dielectric layer on the surface of the substrate; and forming an opening exposing a portion of the conductive layer in the dielectric layer. Further, the method includes forming a passivation layer for protecting the portion of the conductive layer on a surface of the portion of the conductive layer on the bottom of the opening using a passivation solution; and cleaning inner surface of the opening using a cleaning solution not reacting with the passivation layer. Further, the method also includes removing the passivation layer; and forming a metal layer connecting with the conductive layer in the opening.
公开/授权文献
- US20150054156A1 SEMICONDUCTOR STRUCTURES AND FABRICATION METHOD THEREOF 公开/授权日：2015-02-26
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