发明授权
US09305797B2 Polysilicon over-etch using hydrogen diluted plasma for three-dimensional gate etch
有权
使用氢稀释等离子体进行三维栅极蚀刻的多晶硅过蚀刻
- 专利标题： Polysilicon over-etch using hydrogen diluted plasma for three-dimensional gate etch
- 专利标题（中）： 使用氢稀释等离子体进行三维栅极蚀刻的多晶硅过蚀刻
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申请号： US14155571申请日： 2014-01-15
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公开(公告)号： US09305797B2公开(公告)日： 2016-04-05
- 发明人: Radhika C. Mani , Nicolas Gani
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely Sokoloff Taylor Zafman LLP
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/308 ; H01L21/3065 ; H01L21/3213 ; H01L21/28 ; H01L29/66
摘要：
Methods of polysilicon over-etch using hydrogen diluted plasma for three-dimensional gate etch are described. In an example, a method of forming a three-dimensional gate structure includes performing a main plasma etch on a masked polysilicon layer formed over a semiconductor fin. The method also includes, subsequently, performing a plasma over etch on the masked polysilicon layer based on a plasma generated from gaseous composition including hydrogen gas (H2).
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