Invention Grant
- Patent Title: Controlled manufacturing method of metal oxide semiconductor and metal oxide semiconductor structure having controlled growth crystallographic plane
- Patent Title (中): 具有受控生长结晶面的金属氧化物半导体和金属氧化物半导体结构的受控制造方法
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Application No.: US13859250Application Date: 2013-04-09
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Publication No.: US09305778B2Publication Date: 2016-04-05
- Inventor: Young-jun Park , Jung-inn Sohn , Seung-nam Cha , Ji-yeon Ku
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2012-0130505 20121116
- Main IPC: H01B1/00
- IPC: H01B1/00 ; H01L29/08 ; H01L51/40 ; H01L21/02 ; H01B1/08 ; H01L29/04 ; H01L29/06 ; B82Y10/00 ; H01L29/22
Abstract:
A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.
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