Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US14154556Application Date: 2014-01-14
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Publication No.: US09300111B2Publication Date: 2016-03-29
- Inventor: Jong Ho Lee , Chan Mook Lim , Young Chul Shin , Su Hyun Jo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2013-0011833 20130201
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01S5/02 ; H01L33/38 ; H01L33/44

Abstract:
A semiconductor light emitting device includes a conductive substrate, a light emitting laminate including a second conductivity type semiconductor layer, an active layer, and a first conductivity type semiconductor layer stacked on the conductive substrate, a first electrode layer electrically connected to the first conductivity type semiconductor layer, a second electrode layer between the conductive substrate and the second conductivity type semiconductor layer, the second electrode layer being electrically connected to the second conductivity type semiconductor layer, and a passivation layer between the active layer and the second electrode layer, the passivation layer covering at least a lateral surface of the active layer of the light emitting laminate.
Public/Granted literature
- US20140219304A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2014-08-07
Information query
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