Invention Grant
- Patent Title: Chip level EMI shielding structure and manufacture method thereof
- Patent Title (中): 芯片级EMI屏蔽结构及其制造方法
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Application No.: US13053528Application Date: 2011-03-22
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Publication No.: US09287218B2Publication Date: 2016-03-15
- Inventor: Ming-Che Wu
- Applicant: Ming-Che Wu
- Applicant Address: CN Shanghai
- Assignee: Universal Scientific Industrial (Shanghai) Co., Ltd.
- Current Assignee: Universal Scientific Industrial (Shanghai) Co., Ltd.
- Current Assignee Address: CN Shanghai
- Agency: Rosenberg, Klein & Lee
- Priority: TW99134475A 20101008
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/552 ; H01L23/498 ; H01L25/00 ; H01L23/31 ; H01L23/00 ; H01L25/065

Abstract:
A chip level EMI shielding structure and manufacture method thereof are provided. The chip level EMI shielding structure includes a semiconductor substrate, at least one ground conductor line, a ground layer, and a connection structure. The ground conductor line is disposed on a first surface of the semiconductor substrate, and the ground layer is disposed on a second surface of the semiconductor substrate. The connection structure is formed on a lateral wall of the semiconductor substrate for connecting the ground conductor lines with the ground layer to form a shielding. With such arrangement, the chip level EMI shielding structure can reduce the chip size and the manufacturing cost.
Public/Granted literature
- US20120086108A1 CHIP LEVEL EMI SHIELDING STRUCTURE AND MANUFACTURE METHOD THEREOF Public/Granted day:2012-04-12
Information query
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