发明授权
- 专利标题： Memory device
- 专利标题（中）： 内存设备
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申请号： US14795533申请日： 2015-07-09
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公开(公告)号： US09281473B1公开(公告)日： 2016-03-08
- 发明人: Kunifumi Suzuki , Kazuhiko Yamamoto
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L27/24 ; G11C13/00
摘要：
According to one embodiment, a memory device includes a resistance change film, a selection element connected with the resistance change film in series, and an electrode connected with at least one of the resistance change film and the selection element. The selection element contains a chalcogenide compound, the chalcogenide compound containing silicon.
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