发明授权
US09281042B1 Non-volatile memory using bi-directional resistive elements and capacitive elements
有权
使用双向电阻元件和电容元件的非易失性存储器
- 专利标题： Non-volatile memory using bi-directional resistive elements and capacitive elements
- 专利标题（中）： 使用双向电阻元件和电容元件的非易失性存储器
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申请号： US14572780申请日： 2014-12-17
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公开(公告)号： US09281042B1公开(公告)日： 2016-03-08
- 发明人: Perry H. Pelley , Frank K. Baker, Jr. , Ravindraraj Ramaraju
- 申请人： Perry H. Pelley , Frank K. Baker, Jr. , Ravindraraj Ramaraju
- 申请人地址： US TX Austin
- 专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人： FREESCALE SEMICONDUCTOR, INC.
- 当前专利权人地址： US TX Austin
- 代理机构： The Mason Group Patent Specialists, LLC
- 代理商 Valerie M. Davis
- 主分类号： G11C13/00
- IPC分类号： G11C13/00 ; G11C11/16 ; G11C11/24
摘要：
A memory cell includes a bi-directional resistive memory element, a first transistor, and a capacitive element. The bi-directional resistive memory element has a first terminal directly connected to a first power rail and a second terminal coupled to an internal node. The first transistor has a control electrode coupled to the internal node, a first current electrode coupled to a first bitline, and a second current electrode coupled to one of the first power rail, a second power rail, or a read wordline. The capacitive element includes a first terminal coupled to the internal node and a second terminal coupled to the read wordline.
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