发明授权
US09269497B2 Integrated capacitively-coupled bias circuit for RF MEMS switches
有权
用于RF MEMS开关的集成电容耦合偏置电路
- 专利标题: Integrated capacitively-coupled bias circuit for RF MEMS switches
- 专利标题(中): 用于RF MEMS开关的集成电容耦合偏置电路
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申请号: US14292598申请日: 2014-05-30
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公开(公告)号: US09269497B2公开(公告)日: 2016-02-23
- 发明人: Francis J. Morris
- 申请人: Raytheon Company
- 申请人地址: US MA Waltham
- 专利权人: RAYTHEON COMPANY
- 当前专利权人: RAYTHEON COMPANY
- 当前专利权人地址: US MA Waltham
- 代理机构: Lewis Roca Rothgerber Christie LLP
- 主分类号: H01G5/16
- IPC分类号: H01G5/16 ; H01H59/00 ; H01L29/92 ; H01L49/02 ; H01L29/66
摘要:
A switchable capacitor including a first electrode, a dielectric layer on the first electrode, a second electrode configured to be suspended in an undeflected position over the dielectric layer in a de-activated state, and to deflect toward the first electrode in an activated state in response to a voltage difference between the two electrodes, a gap between the second electrode and the dielectric layer in the activated state being less than a corresponding gap in the de-activated state, and a capacitor having a first and second end, coupled to one of the electrodes at the first end, and configured to reduce the voltage difference between the electrodes as the second electrode deflects toward the first electrode in the activated state, wherein the voltage difference between the electrodes corresponds to a bias voltage applied across the second end of the capacitor and an other one of the first and second electrodes.
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