Invention Grant
- Patent Title: Processing apparatus and ion implantation apparatus
- Patent Title (中): 处理装置和离子注入装置
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Application No.: US13764260Application Date: 2013-02-11
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Publication No.: US09267982B2Publication Date: 2016-02-23
- Inventor: Shao-Hua Wang , Ming-Te Chen , Sheng-Wei Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Hauptman Ham, LLP
- Main IPC: H01J37/00
- IPC: H01J37/00 ; G01R31/26 ; H01J37/30 ; H01J37/317

Abstract:
A processing apparatus includes an end station configured to support thereon a workpiece, an ion beam generator and a scanning device. The ion beam generator is configured to generate an ion beam toward the end station. The scanning device is configured to scan the ion beam in a transverse scanning direction. The scanning device is configured to be disposed in a first path of the ion beam toward the end station and out of a second path of the ion beam toward the end station.
Public/Granted literature
- US20140227453A1 PROCESSING APPARATUS, ION IMPLANTATION APPARATUS AND ION IMPLANTATION METHOD Public/Granted day:2014-08-14
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