Invention Grant
- Patent Title: Cell having shifted boundary and boundary-shift scheme
- Patent Title (中): 移位边界和边界移位方案
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Application No.: US13791406Application Date: 2013-03-08
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Publication No.: US09262573B2Publication Date: 2016-02-16
- Inventor: Kuo-Nan Yang , Chou-Kun Lin , Jerry Chang-Jui Kao , Yi-Chuin Tsai , Chien-Ju Chao , Chung-Hsing Wang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
An embodiment cell shift scheme includes abutting a first transistor cell against a second transistor cell and shifting a place and route boundary away from a polysilicon disposed between the first transistor cell and the second transistor cell. In an embodiment, the cell shift scheme includes shifting the place and route boundary to prevent a mismatch between a layout versus schematic (LVS) netlist and a post-simulation netlist.
Public/Granted literature
- US20140258952A1 Cell Having Shifted Boundary and Boundary-Shift Scheme Public/Granted day:2014-09-11
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