- 专利标题： FinFETs with different fin height and EPI height setting
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申请号： US14752316申请日： 2015-06-26
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公开(公告)号： US09257344B2公开(公告)日： 2016-02-09
- 发明人: Hung-Li Chiang , Wei-Jen Lai , Feng Yuan , Tsung-Lin Lee , Chih Chieh Yeh
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/8234 ; H01L21/762 ; H01L21/311 ; H01L21/302
摘要：
An integrated circuit structure includes a first semiconductor strip, first isolation regions on opposite sides of the first semiconductor strip, and a first epitaxy strip overlapping the first semiconductor strip. A top portion of the first epitaxy strip is over a first top surface of the first isolation regions. The structure further includes a second semiconductor strip, wherein the first and the second semiconductor strips are formed of the same semiconductor material. Second isolation regions are on opposite sides of the second semiconductor strip. A second epitaxy strip overlaps the second semiconductor strip. A top portion of the second epitaxy strip is over a second top surface of the second isolation regions. The first epitaxy strip and the second epitaxy strip are formed of different semiconductor materials. A bottom surface of the first epitaxy strip is lower than a bottom surface of the second epitaxy strip.
公开/授权文献
- US20150303116A1 FinFETs with Different Fin Height and EPI Height Setting 公开/授权日：2015-10-22
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