A method includes providing a structure having a substrate, a first electrically insulating layer overlying the substrate, a first semiconductor layer comprised of a first semiconductor material overlying the first electrically insulating layer, a second electrically insulating layer overlying the first semiconductor layer in a first portion of the structure and a second semiconductor layer comprised of a second, different semiconductor material overlying the second electrically insulating layer in the first portion. The method further includes growing additional first semiconductor material on the first semiconductor layer in a second portion of the structure to form a regrown semiconductor layer; forming fins; forming gate structures orthogonal to the fins and removing at least a portion of the first semiconductor layer in the first portion of the structure to form a void and filling the void with insulating material. Structures formed by the method are also disclosed.