发明授权
US09252021B2 Method for patterning a plurality of features for Fin-like field-effect transistor (FinFET) devices
有权
用于图形化鳍状场效应晶体管（FinFET）器件的多个特征的方法
- 专利标题： Method for patterning a plurality of features for Fin-like field-effect transistor (FinFET) devices
- 专利标题（中）： 用于图形化鳍状场效应晶体管（FinFET）器件的多个特征的方法
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申请号： US14485168申请日： 2014-09-12
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公开(公告)号： US09252021B2公开(公告)日： 2016-02-02
- 发明人: Hoi-Tou Ng , Kuei-Liang Lu , Ming-Feng Shieh , Ru-Gun Liu
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L21/308
- IPC分类号： H01L21/308 ; H01L21/84 ; H01L27/12
摘要：
Methods for patterning fins for fin-like field-effect transistor (FinFET) devices are disclosed. An exemplary method includes providing a semiconductor substrate, forming a plurality of elongated protrusions on the semiconductor substrate, the elongated protrusions extending in a first direction, and forming a mask covering a first portion of the elongated protrusions, the mask being formed of a first material having a first etch rate. The method also includes forming a spacer surrounding the mask, the spacer being formed of a second material with an etch rate lower than the etch rate of the first material, the mask and the spacer together covering a second portion of the elongated protrusions larger than the first portion of the elongated protrusions. Further, the method includes removing a remaining portion of the plurality of elongated protrusions not covered by the mask and spacer.
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