Invention Grant
US09240308B2 Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system
有权
霍尔效应增强了电容耦合等离子体源，减排系统和真空处理系统
- Patent Title: Hall effect enhanced capacitively coupled plasma source, an abatement system, and vacuum processing system
- Patent Title (中): 霍尔效应增强了电容耦合等离子体源，减排系统和真空处理系统
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Application No.: US14498920Application Date: 2014-09-26
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Publication No.: US09240308B2Publication Date: 2016-01-19
- Inventor: Michael S. Cox , Rongping Wang , Brian T. West , Roger M. Johnson , Colin John Dickinson
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23C16/54
- IPC: C23C16/54 ; H01J37/32
Abstract:
Embodiments disclosed herein include an abatement system for abating compounds produced in semiconductor processes. The abatement system includes a plasma source that has a first plate and a second plate parallel to the first plate. An electrode is disposed between the first and second plates and an outer wall is disposed between the first and second plates surrounding the electrode. The plasma source has a first plurality of magnets disposed on the first plate and a second plurality of magnets disposed on the second plate. The magnetic field created by the first and second plurality of magnets is substantially perpendicular to the electric field created between the electrode and the outer wall. In this configuration, a dense plasma is created.
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