发明授权
- 专利标题： Semiconductor device with buried bit line and method for fabricating the same
- 专利标题（中）： 具有掩埋位线的半导体器件及其制造方法
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申请号： US14264832申请日： 2014-04-29
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公开(公告)号： US09236327B2公开(公告)日： 2016-01-12
- 发明人: Heung-Jae Cho , Bong-Seok Jeon
- 申请人： SK hynix Inc.
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK Hynix Inc.
- 当前专利权人： SK Hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： IP & T Group LLP
- 优先权： KR10-2011-0142200 20111226
- 主分类号： H01L27/108
- IPC分类号： H01L27/108 ; H01L23/48 ; H01L29/66 ; H01L21/74
摘要：
A semiconductor device includes: a punch stop region formed in a substrate; a plurality of buried bit lines formed over the substrate; a plurality of pillar structures formed over the buried bit lines; a plurality of word lines extending to intersect the buried bit lines and being in contact with the pillar structures; and an isolation layer isolating the word lines from the buried bit lines.
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