发明授权
- 专利标题： Apparatus and method for depositing electrically conductive pasting material
- 专利标题（中）： 用于沉积导电粘贴材料的设备和方法
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申请号： US11947459申请日： 2007-11-29
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公开(公告)号： US09224582B2公开(公告)日： 2015-12-29
- 发明人: John Forster , Anantha Subramani , Wei D. Wang
- 申请人： John Forster , Anantha Subramani , Wei D. Wang
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Patterson & Sheridan, LLP
- 主分类号： C23C14/34
- IPC分类号： C23C14/34 ; H01J37/32 ; H01L21/02 ; H01L21/67
摘要：
A method and apparatus are described for reducing particle contamination in a plasma processing chamber. In one embodiment, a pasting disk is provided which includes a disk-shaped base of high-resistivity material that has an electrically conductive pasting material layer applied to a top surface of the base so that the pasting material layer partially covers the top surface of the base. The pasting disk is sputter etched to deposit conductive pasting material over a wide area on the interior surfaces of a plasma processing chamber while minimizing deposition on dielectric components that are used to optimize the sputter etch process during substrate processing.
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