发明授权
- 专利标题： Semiconductor device manufacturing method and electronic device manufacturing method
- 专利标题（中）： 半导体器件制造方法和电子器件制造方法
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申请号： US13749126申请日： 2013-01-24
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公开(公告)号： US09214361B2公开(公告)日： 2015-12-15
- 发明人: Yoshikatsu Ishizuki , Shinya Sasaki , Motoaki Tani
- 申请人： FUJITSU LIMITED
- 申请人地址： JP Kawasaki
- 专利权人： FUJITSU LIMITED
- 当前专利权人： FUJITSU LIMITED
- 当前专利权人地址： JP Kawasaki
- 代理机构： Kratz, Quintos & Hanson, LLP
- 优先权： JP2012-032677 20120217
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/56 ; H01L23/00 ; H01L21/683 ; H01L23/31
摘要：
A method of manufacturing a semiconductor device, includes: placing a semiconductor element on an adhesive layer that is placed on a support body having a first through hole; placing a part in an area that includes a portion corresponding to the first through-hole, the portion being on the adhesive layer placed on the support body; forming a substrate on the adhesive layer by forming a resin layer on the adhesive layer, on which the semiconductor element and the part have been placed, the substrate including the semiconductor element, the part, and the resin layer; and detaching the substrate from the adhesive layer by pressing the part through the first through-hole.
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