发明授权
US09214343B2 ZNSNO3/ZNO nanowire having core-shell structure, method of forming ZNSNO3/ZNO nanowire and nanogenerator including ZNSNO3/ZNO nanowire, and method of forming ZNSNO3 nanowire and nanogenerator including ZNSNO3 nanowire
有权
具有核 - 壳结构的ZNSNO3 / ZNO纳米线，形成ZNSNO3 / ZNO纳米线的方法和ZNSNO3 / ZNO纳米线的纳米发生器，以及形成ZNSNO3纳米线和包含ZNSNO3纳米线的纳米发生器的方法
- 专利标题： ZNSNO3/ZNO nanowire having core-shell structure, method of forming ZNSNO3/ZNO nanowire and nanogenerator including ZNSNO3/ZNO nanowire, and method of forming ZNSNO3 nanowire and nanogenerator including ZNSNO3 nanowire
- 专利标题（中）： 具有核 - 壳结构的ZNSNO3 / ZNO纳米线，形成ZNSNO3 / ZNO纳米线的方法和ZNSNO3 / ZNO纳米线的纳米发生器，以及形成ZNSNO3纳米线和包含ZNSNO3纳米线的纳米发生器的方法
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申请号： US13489200申请日： 2012-06-05
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公开(公告)号： US09214343B2公开(公告)日： 2015-12-15
- 发明人: Jung-inn Sohn , Seung-Nam Cha , Sung-min Kim , Sang-woo Kim
- 申请人： Jung-inn Sohn , Seung-Nam Cha , Sung-min Kim , Sang-woo Kim
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 代理机构： Sughrue Mion, PLLC
- 优先权： KR10-2011-0078747 20110808
- 主分类号： H01L41/08
- IPC分类号： H01L41/08 ; H01L21/02 ; H01L41/113 ; H01L41/18 ; H01L29/06
摘要：
A ZnSnO3/ZnO nanowire, a method of forming a ZnSnO3/ZnO nanowire, a nanogenerator including a ZnSnO3/ZnO nanowire, a method of forming a ZnSnO3 nanowire, and a nanogenerator including a ZnSnO3 nanowire are provided. The ZnSnO3/ZnO nanowire includes a core and a shell that surrounds the core, wherein the core includes ZnSnO3 and the shell includes ZnO.
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