发明授权
- 专利标题： Semiconductor apparatus
- 专利标题（中）： 半导体装置
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申请号： US13803200申请日： 2013-03-14
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公开(公告)号： US09209133B2公开(公告)日： 2015-12-08
- 发明人: Jae Min Kim , Myung Gun Park
- 申请人： SK hynix Inc.
- 申请人地址： KR Gyeonggi-do
- 专利权人： SK Hynix Inc.
- 当前专利权人： SK Hynix Inc.
- 当前专利权人地址： KR Gyeonggi-do
- 代理机构： William Park & Associates Ltd.
- 优先权： KR10-2012-0138754 20121203
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L23/525 ; H01L23/00
摘要：
A semiconductor apparatus includes a semiconductor chip formed with cut fuses over one surface thereof; and migration preventing modules preventing occurrence of a phenomenon in which metal ions of the fuses migrate to cut zones of the fuses; each migration preventing module including: a ground electrode formed in the semiconductor chip to face the fuse with a first insulation member interposed therebetween; a floating electrode formed over the fuse with a second insulation member interposed therebetween to face the ground electrode with the fuse interposed therebetween; and a power supply electrode formed over the floating electrode with a third insulation member interposed therebetween.
公开/授权文献
- US20140151842A1 SEMICONDUCTOR APPARATUS 公开/授权日：2014-06-05
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