Invention Grant
US09208871B2 Implementing enhanced data read for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding
有权
使用阈值电压漂移或电阻漂移容限移动基线存储器数据编码来实现对多电平单元（MLC）存储器的增强型数据读取
- Patent Title: Implementing enhanced data read for multi-level cell (MLC) memory using threshold voltage-drift or resistance drift tolerant moving baseline memory data encoding
- Patent Title (中): 使用阈值电压漂移或电阻漂移容限移动基线存储器数据编码来实现对多电平单元（MLC）存储器的增强型数据读取
-
Application No.: US13361918Application Date: 2012-01-30
-
Publication No.: US09208871B2Publication Date: 2015-12-08
- Inventor: Zvonimir Z. Bandic , Luiz M. Franca-Neto , Cyril Guyot , Robert Eugeniu Mateescu
- Applicant: Zvonimir Z. Bandic , Luiz M. Franca-Neto , Cyril Guyot , Robert Eugeniu Mateescu
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agent Joan Pennington
- Main IPC: G11C11/56
- IPC: G11C11/56 ; G11C13/00 ; G11C16/26 ; G11C16/34
Abstract:
A method and apparatus are provided for implementing enhanced data read for multi-level cell (MLC) memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding. A data read back for data written to the MLC memory using threshold-voltage-drift or resistance-drift tolerant moving baseline memory data encoding is performed, higher voltage and lower voltage levels are compared, and respective data values are identified responsive to the compared higher voltage and lower voltage levels.
Public/Granted literature
Information query
