发明授权
- 专利标题: Light emitting diode
- 专利标题(中): 发光二极管
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申请号: US14542645申请日: 2014-11-16
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公开(公告)号: US09202977B2公开(公告)日: 2015-12-01
- 发明人: Zhen-Dong Zhu , Qun-Qing Li , Li-Hui Zhang , Mo Chen , Shou-Shan Fan
- 申请人: Tsinghua University , HON HAI PRECISION INDUSTRY CO., LTD.
- 申请人地址: CN Beijing TW New Taipei
- 专利权人: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- 当前专利权人: Tsinghua University,HON HAI PRECISION INDUSTRY CO., LTD.
- 当前专利权人地址: CN Beijing TW New Taipei
- 代理机构: Novak Druce Connolly Bove + Quigg LLP
- 优先权: CN201110395475 20111203
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L33/24 ; H01L33/06 ; H01L33/22 ; H01L33/20
摘要:
A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of first three-dimensional nano-structures are located on the second surface of the first semiconductor layer. A number of second three-dimensional nano-structures are located on a surface of the active layer contacting the second semiconductor layer, and a cross section of each of the three-dimensional nano-structures is M-shaped.
公开/授权文献
- US20150069326A1 LIGHT EMITTING DIODE 公开/授权日:2015-03-12
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