发明授权
US09202480B2 Double patterning hard mask for damascene perpendicular magnetic recording (PMR) writer 有权
用于大马士革垂直磁记录(PMR)作者的双重图案化硬掩模

Double patterning hard mask for damascene perpendicular magnetic recording (PMR) writer
摘要:
Various embodiments of the subject disclosure provide a double patterning process that uses two patterning steps to produce a write structure having a nose shape with sharp corners. In one embodiment, a method for forming a write structure on a multi-layer structure comprising a substrate and an insulator layer on the substrate is provided. The method comprises forming a hard mask layer over the insulator layer, performing a first patterning process to form a pole and yoke opening in the hard mask layer, performing a second patterning process to remove rounded corners of the pole and yoke opening in the hard mask layer, removing a portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer to form a trench in the insulator layer, and filling the trench with a magnetic material.
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