发明授权
US09202480B2 Double patterning hard mask for damascene perpendicular magnetic recording (PMR) writer
有权
用于大马士革垂直磁记录(PMR)作者的双重图案化硬掩模
- 专利标题: Double patterning hard mask for damascene perpendicular magnetic recording (PMR) writer
- 专利标题(中): 用于大马士革垂直磁记录(PMR)作者的双重图案化硬掩模
-
申请号: US12579316申请日: 2009-10-14
-
公开(公告)号: US09202480B2公开(公告)日: 2015-12-01
- 发明人: Xiaohai Xiang , Yun-Fei Li , Jinqiu Zhang , Hongping Yuan , Xianzhong Zeng , Hai Sun
- 申请人: Xiaohai Xiang , Yun-Fei Li , Jinqiu Zhang , Hongping Yuan , Xianzhong Zeng , Hai Sun
- 申请人地址: US CA Fremont
- 专利权人: Western Digital (Fremont), LLC.
- 当前专利权人: Western Digital (Fremont), LLC.
- 当前专利权人地址: US CA Fremont
- 主分类号: B44C1/22
- IPC分类号: B44C1/22 ; C03C15/00 ; H01L21/4763 ; G11B5/31 ; G11B5/127
摘要:
Various embodiments of the subject disclosure provide a double patterning process that uses two patterning steps to produce a write structure having a nose shape with sharp corners. In one embodiment, a method for forming a write structure on a multi-layer structure comprising a substrate and an insulator layer on the substrate is provided. The method comprises forming a hard mask layer over the insulator layer, performing a first patterning process to form a pole and yoke opening in the hard mask layer, performing a second patterning process to remove rounded corners of the pole and yoke opening in the hard mask layer, removing a portion of the insulator layer corresponding to the pole and yoke opening in the hard mask layer to form a trench in the insulator layer, and filling the trench with a magnetic material.
公开/授权文献
信息查询