发明授权
- 专利标题： LDMOS CHC reliability
- 专利标题（中）： LDMOS CHC可靠性
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申请号： US14557648申请日： 2014-12-02
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公开(公告)号： US09196728B2公开(公告)日： 2015-11-24
- 发明人: Seetharaman Sridhar
- 申请人： Texas Instruments Incorporated
- 申请人地址： US TX Dallas
- 专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人： TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址： US TX Dallas
- 代理商 Jacqueline J. Garner; Frank D. Cimino
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L29/78 ; H01L29/66 ; H01L29/08 ; H01L29/06 ; H01L29/04 ; H01L21/3105 ; H01L21/311
摘要：
An integrated circuit on a rotated substrate with an LDMOS transistor. A method of enhancing the CHC performance of an LDMOS transistor by growing a second STI liner oxide. A method of enhancing the CHC performance of an LDMOS transistor building the LDMOS transistor on a rotated substrate and growing a second STI liner oxide.
公开/授权文献
- US20150187937A1 LDMOS CHC RELIABILITY 公开/授权日：2015-07-02
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