发明授权
- 专利标题: Nonvolatile semiconductor memory device
- 专利标题(中): 非易失性半导体存储器件
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申请号: US14340518申请日: 2014-07-24
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公开(公告)号: US09190117B2公开(公告)日: 2015-11-17
- 发明人: Takanori Ueda , Kazuyuki Kouno
- 申请人: PANASONIC CORPORATION
- 申请人地址: JP Osaka
- 专利权人: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- 当前专利权人: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- 当前专利权人地址: JP Osaka
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2012-043219 20120229
- 主分类号: G11C7/14
- IPC分类号: G11C7/14 ; G11C5/06 ; G11C13/00 ; G11C7/12 ; G11C8/14 ; G11C16/28
摘要:
A nonvolatile semiconductor memory device includes: a memory cell array having a plurality of memory cells arranged in a matrix; a reference bit line; a reference source line; at least one reference cell including first and second transistors serially connected between these lines; a reference word line connected to the gate of the first transistor; and a reference driver circuit configured to control the gate voltage of the second transistor.
公开/授权文献
- US20140334217A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 公开/授权日:2014-11-13
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