发明授权
US09190117B2 Nonvolatile semiconductor memory device 有权
非易失性半导体存储器件

Nonvolatile semiconductor memory device
摘要:
A nonvolatile semiconductor memory device includes: a memory cell array having a plurality of memory cells arranged in a matrix; a reference bit line; a reference source line; at least one reference cell including first and second transistors serially connected between these lines; a reference word line connected to the gate of the first transistor; and a reference driver circuit configured to control the gate voltage of the second transistor.
公开/授权文献
信息查询
0/0