Invention Grant
- Patent Title: Semiconductor module and heat radiation member
- Patent Title (中): 半导体模块和散热构件
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Application No.: US13389878Application Date: 2010-07-15
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Publication No.: US09179578B2Publication Date: 2015-11-03
- Inventor: Shin Soyano , Masaki Ono , Kenji Suzuki , Akira Morozumi
- Applicant: Shin Soyano , Masaki Ono , Kenji Suzuki , Akira Morozumi
- Applicant Address: JP
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP
- Agency: Rossi, Kimms & McDowell LLP
- Priority: JP2009-193944 20090825
- International Application: PCT/JP2010/004610 WO 20100715
- International Announcement: WO2011/024377 WO 20110303
- Main IPC: G06F1/20
- IPC: G06F1/20 ; H05K7/20 ; F28F7/00 ; H01L23/34 ; H01L23/367 ; H01L23/373 ; H01L25/07

Abstract:
The characteristics of a heat radiation member used in a semiconductor module are improved.A heat radiation member (10A) including an aluminum type member (20) which contains aluminum and a copper type member (30) which contains copper, which is embedded in the aluminum type member (20), and sides of which are enclosed by the aluminum type member (20) is formed. A semiconductor element is thermally bonded to the heat radiation member (10A) to fabricate a semiconductor module. The heat radiation member (10A) includes the aluminum type member (20) and the copper type member (30). As a result, it is possible to realize light weight while ensuring certain heat radiation. In addition, the copper type member (30) is enclosed by the aluminum type member (20). Accordingly, the strength of the heat radiation member (10A) can be increased.
Public/Granted literature
- US20120140420A1 SEMICONDUCTOR MODULE AND HEAT RADIATION MEMBER Public/Granted day:2012-06-07
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