发明授权
- 专利标题： High-frequency semiconductor package and high-frequency semiconductor device
- 专利标题（中）： 高频半导体封装和高频半导体器件
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申请号： US14093849申请日： 2013-12-02
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公开(公告)号： US09177881B2公开(公告)日： 2015-11-03
- 发明人: Yoshiyuki Ikuma , Masatoshi Suzuki
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2013-045637 20130307
- 主分类号： H01L23/10
- IPC分类号： H01L23/10 ; H01L23/552 ; H01L23/66 ; H01L23/045 ; H01L23/20
摘要：
Certain embodiments provide a high-frequency semiconductor package including: a base which is made of metal and is a grounding portion; a multi-layer wiring resin substrate; a first internal conductor film; and a lid. The multi-layer wiring resin substrate is provided on a top surface of the base, and has a frame shape in which a first cavity from which the top surface of the base is exposed is formed. The first internal conductor film covers surfaces which form a top surface of the multi-layer wiring resin substrate and an inner wall surface of the first cavity, and is electrically connected with the base. The lid is attached onto the multi-layer wiring resin substrate, and seals and covers the first cavity.
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