Invention Grant
US09171900B2 Method of fabricating a gallium nitride P-i-N diode using implantation
有权
使用注入制造氮化镓P-i-N二极管的方法
- Patent Title: Method of fabricating a gallium nitride P-i-N diode using implantation
- Patent Title (中): 使用注入制造氮化镓P-i-N二极管的方法
-
Application No.: US14454524Application Date: 2014-08-07
-
Publication No.: US09171900B2Publication Date: 2015-10-27
- Inventor: Isik C. Kizilyalli , Hui Nie , Andrew P. Edwards , Richard J. Brown , Donald R. Disney
- Applicant: Avogy, Inc.
- Applicant Address: US CA San Jose
- Assignee: AVOGY, INC.
- Current Assignee: AVOGY, INC.
- Current Assignee Address: US CA San Jose
- Agency: Kilpatrick Townsend & Stockton LLP
- Main IPC: H01L29/868
- IPC: H01L29/868 ; H01L29/20 ; H01L21/20 ; H01L29/06 ; H01L29/66
Abstract:
A III-nitride semiconductor device includes an active region for supporting current flow during forward-biased operation of the III-nitride semiconductor device. The active region includes a first III-nitride epitaxial material having a first conductivity type, and a second III-nitride epitaxial material having a second conductivity type. The III-nitride semiconductor device further includes an edge-termination region physically adjacent to the active region and including an implanted region comprising a portion of the first III-nitride epitaxial material. The implanted region of the first III-nitride epitaxial material has a reduced electrical conductivity in relation to portions of the first III-nitride epitaxial material adjacent to the implanted region.
Public/Granted literature
- US20140346527A1 Method of fabricating a gallium nitride p-i-n diode using implantation Public/Granted day:2014-11-27
Information query
IPC分类:
