发明授权
- 专利标题: ESD robust level shifter
- 专利标题(中): ESD鲁棒电平转换器
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申请号: US13630721申请日: 2012-09-28
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公开(公告)号: US09154133B2公开(公告)日: 2015-10-06
- 发明人: Muhammad Yusuf Ali , Rajkumar Sankaralingam , Charles M. Branch
- 申请人: Texas Instruments Incorporated
- 申请人地址: US TX Dallas
- 专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人: TEXAS INSTRUMENTS INCORPORATED
- 当前专利权人地址: US TX Dallas
- 代理商 John Pessetto; Frank D. Cimino
- 主分类号: H03H9/46
- IPC分类号: H03H9/46 ; H03K19/003 ; H02H9/04 ; H01L27/02
摘要:
An inverter type level shifter includes a first power supply voltage and a first ground voltage. A first inverter operates on the first power supply voltage and the first ground voltage to generate a first inverter output. The first inverter includes a first PMOS transistor having a drain coupled to a source of a blocking PMOS transistor and a first NMOS transistor having a drain coupled to a source of a blocking NMOS transistor. The level shifter further includes a second power supply voltage and a second ground voltage, and a second inverter coupled to the first inverter output and operates on the second power supply voltage and the second ground voltage. The blocking PMOS provides the required blocking on the event of the voltage spike in the second power supply voltage w.r.t the first power supply voltage and the blocking NMOS transistor provides the required blocking on the event of the voltage spike in the second ground voltage with respect to the first ground voltage.
公开/授权文献
- US20130077196A1 ESD Robust Level Shifter 公开/授权日:2013-03-28
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