Invention Grant
- Patent Title: Light emitting diode and manufacturing method thereof
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US14059767Application Date: 2013-10-22
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Publication No.: US09147855B2Publication Date: 2015-09-29
- Inventor: Feng Zhang , Tianming Dai , Qi Yao
- Applicant: BOE Technology Group Co., Ltd.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Priority: CN201210407147 20121023
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L21/00 ; H01L51/50
Abstract:
The embodiments of the present invention relate to a light emitting diode and manufacturing method thereof. The electroluminescent layer of the light-emitting diode is formed of graphene/compound semiconductor quantum dot composites.
Public/Granted literature
- US20140110665A1 LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-04-24
Information query
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