发明授权
US09136356B2 Non-planar field effect transistor having a semiconductor fin and method for manufacturing
有权
具有半导体鳍片的非平面场效应晶体管及其制造方法
- 专利标题： Non-planar field effect transistor having a semiconductor fin and method for manufacturing
- 专利标题（中）： 具有半导体鳍片的非平面场效应晶体管及其制造方法
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申请号： US14176873申请日： 2014-02-10
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公开(公告)号： US09136356B2公开(公告)日： 2015-09-15
- 发明人: Chien-Chih Lin , Long-Jie Hong , Chih-Lin Wang , Chia-Der Chang
- 申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 申请人地址： TW Hsinchu
- 专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- 当前专利权人地址： TW Hsinchu
- 代理机构： Maschoff Brennan
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L21/311
摘要：
A method for manufacturing a semiconductor device includes forming two isolation structures in a substrate to define a fin structure between the two isolation structures in the substrate. A dummy gate and spacers are formed bridging the two isolation structures and over the fin structure. The two isolation structures are etched with the dummy gate and the spacers as a mask to form a plurality of slopes under the spacers in the two isolation structures. A gate etch stop layer is formed overlying the plurality of slopes. The dummy gate and the two isolation structures beneath the dummy gate are removed to create a cavity confined by the spacers and the gate etch stop layer. A gate is then formed in the cavity.
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