发明授权
- 专利标题： Memory cell structure and method for forming the same
- 专利标题（中）： 记忆单元结构及其形成方法
-
申请号： US14255977申请日： 2014-04-18
-
公开(公告)号： US09136276B1公开(公告)日： 2015-09-15
- 发明人: Ya-Huei Huang , Sung-Bin Lin , Wen-Chung Chang , Feng-Ji Tsai , Yen-Ting Ho , Chien-Hung Chen
- 申请人： UNITED MICROELECTRONICS CORP.
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L29/792 ; H01L29/66
摘要：
A method for forming a memory cell structure includes following steps. A substrate including at least a memory cell region defined thereon is provided, and a first gate stack is formed in the memory cell region. A first LDD implantation is performed to form a first LDD at one side of the first gate stack in the memory cell region, and the first LDD includes a first conductivity type. A second LDD implantation is performed to form a second LDD at one side of the first gate stack opposite to the first LDD in the memory cell region, and the second LDD includes the first conductivity type. The first LDD and the second LDD are different from each other.
信息查询
IPC分类:
