Invention Grant
- Patent Title: Memory device
- Patent Title (中): 内存设备
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Application No.: US14027372Application Date: 2013-09-16
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Publication No.: US09136270B2Publication Date: 2015-09-15
- Inventor: Hyun-Chul Kim , Jae-Seok Kim , Chan-Hong Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2012-0120036 20121026
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/108 ; H01L29/423 ; H01L21/762
Abstract:
A device isolation layer of the memory device includes a first insulation layer in a lower portion of a device isolation trench, a second insulation layer in an upper portion of the device isolation trench and a separation layer between the first insulation layer and the second insulation layer. First and second conductive fillers are in the first and second insulation layers and are separated by the separation layer.
Public/Granted literature
- US20140117459A1 MEMORY DEVICE Public/Granted day:2014-05-01
Information query
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