Invention Grant
US09133564B2 Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other
有权
III族氮化物晶体在具有至少两个表面的种子上的等温生长彼此形成锐角，右或钝角
- Patent Title: Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other
- Patent Title (中): III族氮化物晶体在具有至少两个表面的种子上的等温生长彼此形成锐角，右或钝角
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Application No.: US13283862Application Date: 2011-10-28
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Publication No.: US09133564B2Publication Date: 2015-09-15
- Inventor: Siddha Pimputkar , James S. Speck , Shuji Nakamura , Shin-Ichiro Kawabata
- Applicant: Siddha Pimputkar , James S. Speck , Shuji Nakamura , Shin-Ichiro Kawabata
- Applicant Address: US CA Oakland
- Assignee: The Regents of the University of California
- Current Assignee: The Regents of the University of California
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: C30B7/10
- IPC: C30B7/10 ; C30B29/40
Abstract:
An ammonothermal growth of group-III nitride crystals on starting seed crystals with at least two surfaces making an acute, right or obtuse angle, i.e., greater than 0 degrees and less than 180 degrees, with respect to each other, such that the exposed surfaces together form a concave surface.
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