Invention Grant
US09130160B2 Non-volatile memory device having multi-level cells and method of forming the same
有权
具有多电平电池的非易失性存储器件及其形成方法
- Patent Title: Non-volatile memory device having multi-level cells and method of forming the same
- Patent Title (中): 具有多电平电池的非易失性存储器件及其形成方法
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Application No.: US14336007Application Date: 2014-07-21
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Publication No.: US09130160B2Publication Date: 2015-09-08
- Inventor: Gyu-Hwan Oh
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0065102 20120618
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L45/00 ; G11C11/56 ; H01L27/24 ; G11C13/00
Abstract:
A non-volatile memory device including multi-level cells is provided. The device includes first and second conductive patterns. Additionally, the device includes an electrode structure and a data storage pattern between the first and second conductive patterns. The data storage pattern may include a phase change material and a first vertical thickness of a first portion of the data storage pattern may be less than a second vertical thickness of a second portion of the data storage pattern. The electrode structure may include first and second electrodes and a vertical thickness of the first electrode may be greater than that of the second electrode.
Public/Granted literature
- US20140326942A1 NON-VOLATILE MEMORY DEVICE HAVING MULTI-LEVEL CELLS AND METHOD OF FORMING THE SAME Public/Granted day:2014-11-06
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