发明授权
- 专利标题: Target supply device and EUV light generation chamber
- 专利标题(中): 目标供应装置和EUV发光室
-
申请号: US14159909申请日: 2014-01-21
-
公开(公告)号: US09125285B2公开(公告)日: 2015-09-01
- 发明人: Hiroshi Umeda
- 申请人: GIGAPHOTON INC.
- 申请人地址: JP Tochigi
- 专利权人: GIGAPHOTON INC.
- 当前专利权人: GIGAPHOTON INC.
- 当前专利权人地址: JP Tochigi
- 代理机构: McDermott Will & Emery LLP
- 优先权: JP2013-012320 20130125
- 主分类号: H05G2/00
- IPC分类号: H05G2/00
摘要:
A target supply device may include a tank including a nozzle, a first electrode disposed within the tank, a first potential setting unit configured to set a potential at the first electrode to a first potential, a second electrode provided with a first through-hole and disposed so that a center axis of the nozzle is positioned within the first through-hole, a second potential setting unit configured to set a potential at the second electrode to a second potential that is different from the first potential, and a charge neutralization unit configured to neutralize a charge of the target material that passes through a first region located between the second electrode and the plasma generation region.
公开/授权文献
- US20140209819A1 TARGET SUPPLY DEVICE AND EUV LIGHT GENERATION CHAMBER 公开/授权日:2014-07-31
信息查询