发明授权
US09125285B2 Target supply device and EUV light generation chamber 有权
目标供应装置和EUV发光室

  • 专利标题: Target supply device and EUV light generation chamber
  • 专利标题(中): 目标供应装置和EUV发光室
  • 申请号: US14159909
    申请日: 2014-01-21
  • 公开(公告)号: US09125285B2
    公开(公告)日: 2015-09-01
  • 发明人: Hiroshi Umeda
  • 申请人: GIGAPHOTON INC.
  • 申请人地址: JP Tochigi
  • 专利权人: GIGAPHOTON INC.
  • 当前专利权人: GIGAPHOTON INC.
  • 当前专利权人地址: JP Tochigi
  • 代理机构: McDermott Will & Emery LLP
  • 优先权: JP2013-012320 20130125
  • 主分类号: H05G2/00
  • IPC分类号: H05G2/00
Target supply device and EUV light generation chamber
摘要:
A target supply device may include a tank including a nozzle, a first electrode disposed within the tank, a first potential setting unit configured to set a potential at the first electrode to a first potential, a second electrode provided with a first through-hole and disposed so that a center axis of the nozzle is positioned within the first through-hole, a second potential setting unit configured to set a potential at the second electrode to a second potential that is different from the first potential, and a charge neutralization unit configured to neutralize a charge of the target material that passes through a first region located between the second electrode and the plasma generation region.
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