发明授权
- 专利标题： Magnetoresistive device and a writing method for a magnetoresistive device
- 专利标题（中）： 磁阻器件和磁阻器件的写入方法
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申请号： US13623741申请日： 2012-09-20
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公开(公告)号： US09123884B2公开(公告)日： 2015-09-01
- 发明人: Yuanhong Luo , Rachid Sbiaa , Yan Hwee Sunny Lua
- 申请人： Agency for Science, Technology and Research
- 申请人地址： SG Singapore
- 专利权人： Agency for Science, Technology and Research
- 当前专利权人： Agency for Science, Technology and Research
- 当前专利权人地址： SG Singapore
- 代理机构： Crockett & Crockett, PC
- 代理商 K. David Crockett, Esq.; Niky Economy Syrengelas, Esq.
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; H01L43/08
摘要：
According to embodiments of the present invention, a magnetoresistive device is provided. The magnetoresistive device includes at least two ferromagnetic soft layers, wherein the at least two ferromagnetic soft layers have different ranges of magnetization switching frequencies. Further embodiments provide a magnetoresistive device including at least two oscillating ferromagnetic structures, wherein ranges of operating current amplitudes at which oscillations are induced for the at least two oscillating ferromagnetic structures are different. According to further embodiments of the present invention, writing methods for the magnetoresistive devices are provided.
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