发明授权
- 专利标题: Method of forming an integrated circuit package
- 专利标题(中): 形成集成电路封装的方法
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申请号: US14534838申请日: 2014-11-06
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公开(公告)号: US09123824B2公开(公告)日: 2015-09-01
- 发明人: Hsien-Wei Chen
- 申请人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 申请人地址: TW
- 专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- 当前专利权人地址: TW
- 代理机构: Lowe Hauptman & Ham, LLP
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L23/00 ; H01L25/10
摘要:
A method of fabricating an integrated circuit package assembly comprises forming solder bumps over a first surface of a first integrated circuit package. The method also comprises forming at least one first support structure over the first surface of the first integrated circuit package or over a second surface of a second integrated circuit package. The method further comprises mounting the first integrated circuit package over a second integrated circuit package. The first integrated circuit package is mounted over the second integrated circuit package with the first surface facing the second surface, and the at least one first support structure is electrically isolated.
公开/授权文献
- US20150064845A1 METHOD OF FORMING AN INTEGRATED CIRCUIT PACKAGE 公开/授权日:2015-03-05
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