Invention Grant
- Patent Title: Full-bridge magnetoresistive rotation sensors and mass fabrication method
- Patent Title (中): 全桥磁阻旋转传感器和大量制造方法
-
Application No.: US14002734Application Date: 2012-03-02
-
Publication No.: US09116199B2Publication Date: 2015-08-25
- Inventor: James G. Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
- Applicant: James G. Deak , Weifeng Shen , Xiaojun Zhang , Xiaofeng Lei , Insik Jin , Songsheng Xue
- Applicant Address: CN
- Assignee: MultiDimension Technology Co., Ltd.
- Current Assignee: MultiDimension Technology Co., Ltd.
- Current Assignee Address: CN
- Agency: Schwegman Lundberg & Woessner, P.A.
- Priority: CN201110050704 20110303
- International Application: PCT/CN2012/071889 WO 20120302
- International Announcement: WO2012/116660 WO 20120907
- Main IPC: G01B7/14
- IPC: G01B7/14 ; G01B7/30 ; G01R33/06 ; H01L43/08 ; G01R33/09 ; B82Y25/00 ; G01D5/14 ; G01R33/02

Abstract:
A single package magnetoresistive angle sensor for use in measuring rotation angle of a magnet is disclosed. The magnetoresistive angle sensor comprises a pair of magnetoresistive sensor chips, wherein one of the chips is rotated by 180-degree rotation relative to the other. The magnetoresistive sensor chips are attached to a standard semiconductor package lead frame to form a single-axis push-pull full-bridge sensor. Each of the magnetoresistive sensor chips comprises a pair of magnetoresistance sensor arms. Each magnetoresistive sensor arm comprises one or more GMR or MTJ sensor elements. The GMR of MTR sensor elements utilize a pined layer. The element blocks of the magnetoresistive sensor electrically are interconnected and connected to the package leads by wirebonding. The magnetoresistive angle sensor can be packaged into various standard semiconductor package designs. Also, provided is a dual-axis push-pull full-bridge magnetoresistive angle sensor comprised of two pairs of magnetoresistive sensor chips.
Public/Granted literature
- US20130335073A1 Full-Bridge Magnetoresistive Rotation Sensors and Mass Fabrication Method Public/Granted day:2013-12-19
Information query