发明授权
- 专利标题: Voids in STI regions for forming bulk FinFETs
- 专利标题(中): 在STI区域中形成大块FinFET的空隙
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申请号: US14275632申请日: 2014-05-12
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公开(公告)号: US09112052B2公开(公告)日: 2015-08-18
- 发明人: Hung-Ming Chen , Feng Yuan , Tsung-Lin Lee , Chih Chieh Yeh
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsin-Chu
- 专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址: TW Hsin-Chu
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L21/76
- IPC分类号: H01L21/76 ; H01L21/8234 ; H01L27/088 ; H01L29/06 ; H01L21/762 ; H01L21/764 ; H01L21/84
摘要:
An embodiment is an integrated circuit structure including two insulation regions over a substrate with one of the two insulation regions including a void, at least a bottom surface of the void being defined by the one of the two insulation regions. The integrated circuit structure further includes a first semiconductor strip between and adjoining the two insulation regions, where the first semiconductor strip includes a top portion forming a fin over top surfaces of the two insulation regions, a gate dielectric over a top surface and sidewalls of the fin, and a gate electrode over the gate dielectric.
公开/授权文献
- US20140246731A1 Voids in STI Regions for Forming Bulk FinFETs 公开/授权日:2014-09-04
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