发明授权
US09112052B2 Voids in STI regions for forming bulk FinFETs 有权
在STI区域中形成大块FinFET的空隙

Voids in STI regions for forming bulk FinFETs
摘要:
An embodiment is an integrated circuit structure including two insulation regions over a substrate with one of the two insulation regions including a void, at least a bottom surface of the void being defined by the one of the two insulation regions. The integrated circuit structure further includes a first semiconductor strip between and adjoining the two insulation regions, where the first semiconductor strip includes a top portion forming a fin over top surfaces of the two insulation regions, a gate dielectric over a top surface and sidewalls of the fin, and a gate electrode over the gate dielectric.
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