Invention Grant
US09111969B2 Seal member, etching apparatus, and a method of manufacturing a semiconductor device
有权
密封部件，蚀刻装置以及半导体装置的制造方法
- Patent Title: Seal member, etching apparatus, and a method of manufacturing a semiconductor device
- Patent Title (中): 密封部件，蚀刻装置以及半导体装置的制造方法
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Application No.: US13761359Application Date: 2013-02-07
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Publication No.: US09111969B2Publication Date: 2015-08-18
- Inventor: Hideo Eto , Makoto Saito
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Priority: JP2012-130999 20120608
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/67 ; H01L21/3065 ; F16J15/12 ; H01J37/32
Abstract:
Provided is a seal member according to embodiments. The seal member is disposed between an upper electrode and a backing plate in an etching apparatus to seal a gap between the upper electrode and the backing plate. In addition, the seal member is configured to include a high heat conductivity member having a heat conductivity higher than that of a first member formed by using siloxane bond and a low resistance member having a resistivity lower than that of the first member.
Public/Granted literature
- US20130330929A1 SEAL MEMBER, ETCHING APPARATUS, AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2013-12-12
Information query
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