发明授权
- 专利标题： Semiconductor apparatus and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13431728申请日： 2012-03-27
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公开(公告)号： US09111862B2公开(公告)日： 2015-08-18
- 发明人: Xinpeng Wang
- 申请人： Xinpeng Wang
- 申请人地址： CN Shanghai
- 专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人： Semiconductor Manufacturing International (Shanghai) Corporation
- 当前专利权人地址： CN Shanghai
- 代理机构： Koppel, Patrick, Heybl & Philpott
- 代理商 Michael J. Ram
- 优先权： CN201110131061 20110520
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/28 ; H01L29/423 ; H01L29/66 ; H01L29/78
摘要：
A semiconductor apparatus and a manufacturing method therefor is described. The semiconductor apparatus comprises a substrate and a gate structure for a N-channel semiconductor device above the substrate. A recess is formed at a lower end portion of at least one of two sides of the gate where it is adjacent to a source region and a drain region, of the N-channel semiconductor. The channel region of the N-channel semiconductor device has enhanced strain. The apparatus can further have a gate structure for a P-channel semiconductor device above the substrate.
公开/授权文献
- US20120292699A1 SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREOF 公开/授权日：2012-11-22
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