发明授权
- 专利标题: Ion beam apparatus
- 专利标题(中): 离子束装置
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申请号: US13845582申请日: 2013-03-18
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公开(公告)号: US09111717B2公开(公告)日: 2015-08-18
- 发明人: Tatsuya Asahata , Yasuhiko Sugiyama , Hiroshi Oba
- 申请人: HITACHI HIGH-TECH SCIENCE CORPORATION
- 申请人地址: JP
- 专利权人: HITACHI HIGH-TECH SCIENCE CORPORATION
- 当前专利权人: HITACHI HIGH-TECH SCIENCE CORPORATION
- 当前专利权人地址: JP
- 代理机构: Adams & Wilks
- 优先权: JP2012-068016 20120323
- 主分类号: H01J37/10
- IPC分类号: H01J37/10 ; H01J37/302 ; H01J37/305
摘要:
An ion beam apparatus includes an ion source configured to emit an ion beam, a condenser lens electrode that condenses the ion beam, and a condenser lens power source configured to apply a voltage to the condenser lens electrode. A storage portion stores a first voltage value, a second voltage value, a third voltage value, and a fourth voltage value. A control portion retrieves the third voltage value from the storage portion and sets the retrieved third voltage value to the condenser lens power source when an observation mode is switched to a wide-range observation mode, and retrieves the fourth voltage value from the storage portion and sets the retrieved fourth voltage value to the condenser lens power source when a processing mode is switched to the wide-range observation mode.
公开/授权文献
- US20130248732A1 ION BEAM APPARATUS 公开/授权日:2013-09-26
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