发明授权
US09111595B2 Memory device with tracking wordline voltage level circuit and method
有权
具有跟踪字线电压电平电路和方法的存储器件
- 专利标题： Memory device with tracking wordline voltage level circuit and method
- 专利标题（中）： 具有跟踪字线电压电平电路和方法的存储器件
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申请号： US13904653申请日： 2013-05-29
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公开(公告)号： US09111595B2公开(公告)日： 2015-08-18
- 发明人: Yu-Hao Hsu , Ming-Chien Tsai , Chen-Lin Yang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Duane Morris LLP
- 主分类号： G11C8/08
- IPC分类号： G11C8/08 ; G11C7/06 ; G11C7/12 ; G11C11/419 ; G11C29/50 ; G11C29/52
摘要：
A memory includes a clock generator for providing a first clock signal responsive to a second clock signal and a feedback signal. A feedback loop provides the feedback signal and includes a tracking wordline, a tracking bitline, a tracking bit cell, and a tracking wordline driver for driving the tracking wordline responsive to the first clock signal. The memory includes a tracking wordline level tuner for reducing a voltage level of a tracking wordline signal on the tracking wordline responsive to a weak bit control signal.
公开/授权文献
- US20140269141A1 WORDLINE DOUBLER 公开/授权日：2014-09-18
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