发明授权
- 专利标题： Fin-FET and method of forming the same
- 专利标题（中）： Fin-FET及其形成方法
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申请号： US13211334申请日： 2011-08-17
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公开(公告)号： US09105660B2公开(公告)日： 2015-08-11
- 发明人: Chen-Hua Tsai , Rai-Min Huang , Sheng-Huei Dai , Chun-Hsien Lin
- 申请人： Chen-Hua Tsai , Rai-Min Huang , Sheng-Huei Dai , Chun-Hsien Lin
- 申请人地址： TW Science-Based Industrial Park, Hsin-Chu
- 专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人： UNITED MICROELECTRONICS CORP.
- 当前专利权人地址： TW Science-Based Industrial Park, Hsin-Chu
- 代理商 Winston Hsu; Scott Margo
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/02 ; H01L21/20 ; H01L29/78
摘要：
A method of forming a Fin-FET is provided. A substrate is provided, then a mask layer is formed thereabove. A first trench is formed in the substrate and the mask layer. A semiconductor layer is formed in the first trench. Next, the mask layer is removed such that the semi-conductive layer becomes a fin structure embedded in the substrate and protruded above the substrate. Finally, a gate layer is formed on the fin structure.
公开/授权文献
- US20130043506A1 Fin-FET and Method of Forming the Same 公开/授权日：2013-02-21
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