Invention Grant
- Patent Title: Multi-junction photodiode in application of molecular detection and discrimination, and method for fabricating the same
- Patent Title (中): 多结光电二极管在应用分子检测和鉴别中的应用及其制造方法
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Application No.: US13444809Application Date: 2012-04-11
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Publication No.: US09105537B2Publication Date: 2015-08-11
- Inventor: Chiun-Lung Tsai , Jui-Feng Huang , Ming-Fang Hsu , Chih-Yang Chen
- Applicant: Chiun-Lung Tsai , Jui-Feng Huang , Ming-Fang Hsu , Chih-Yang Chen
- Applicant Address: KY Grand Cayman
- Assignee: Personal Genomics, Inc.
- Current Assignee: Personal Genomics, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Jianq Chyun IP Office
- Priority: TW100139395A 20111028
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/02 ; H01L21/336 ; H01L27/146
Abstract:
A multi-junction photodiode for molecular detection and discrimination and fabrication methods thereof. The multi junction photodiode includes a substrate having first conductive type dopants, an epitaxial layer having the first conductive type dopants, a deep well having second conductive type dopants, a first well having the first conductive type dopants, a second well having the second conductive type dopants, a third well having the first conductive type dopants, and a first doped region having the second conductive type dopants. The epitaxial layer is disposed on the substrate. The deep well is disposed in the epitaxial layer. The first well having three sides connected to the epitaxial layer is disposed in the deep well. The second well is disposed in the first well. The third well having three sides connected to the epitaxial layer is disposed in the second well. The first doped region is disposed in the third well.
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